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Attojoule Optoelectronics

AFOSR MURI: Ultralow Power, Ultrafast, Integrated Nano-Optoelectronics

Together with a team of scientists from leading universities across the nation, we aim to introduce and develop revolutionary concepts to model, design, analyze, fabricate and  characterize ultralow-power, ultrafast, high-density, compact, scalable optoelectronic nanodevices. By expanding to dense arrays of these devices, we envision the next generation of integrated nanophotonic systems. Furthermore, we are working toward realizing nanophotonic devices which operate in the femtosecond, nanometer and attojoule ranges, all within a CMOS-compatible, directly scalable, room-temperature environment at telecommunication wavelength.

We will accomplish the above through the following technical approaches:

  • Hybrid material platforms supporting novel phenomena that may significantly push the limits of integration and speed, including quantum effects, 2D materials, metamaterials, heavily-doped semiconductors, and plasmonic materials
  • Novel theoretical tools, including analytical and numerical methods, as well as fundamental bounds on efficiency and speed, capturing the involved complex multiphysics problems, and including and integrating plasmonic, electronic, nonlinear and quantum effects
  • Nanofabrication techniques to realize CMOS-compatible, cost-effective, ultralow power, and ultrafast nanodevices on hybrid substrates
  • Fundamental physics advances  in quantum optics, plasmonics, strong light-matter interactions
  • New nanophotonics concepts, applying metatronics, ε-near-zero, hyperbolic metasurfaces, and meta-electronics

Press Release: Engineers Receive $22.8 Million from DOD for Cross-Disciplinary Projects